Abstract
A nitrogen atom encapsulated fullerene (N@C60) and an azafullerene (C59N), which have characteristic features as novel materials for electronic devices, are selectively synthesized by a plasma-ion irradiation method. It is found that the optimum energies of irradiated ion for C59N and N@C60 syntheses exist around 40-50 eV and 50-200 eV, respectively. The massspectrum peak originated from N@C60 is observed using laser-desorption timeof-flight mass spectrometry. The purity of N@C60 to C60 in the nitrogenfullerene compounds after ion irradiation is about 10-3-10-2 %, which can be improved by high performance liquid chromatography.
Original language | English |
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Pages | 279-282 |
Number of pages | 4 |
Publication status | Published - 2007 |
Event | 4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007 - Snowbird, UT, United States Duration: 2007 Apr 18 → 2007 Apr 21 |
Conference
Conference | 4th Conference on Foundations of Nanoscience: Self-Assembled Architectures and Devices, FNANO 2007 |
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Country/Territory | United States |
City | Snowbird, UT |
Period | 07/4/18 → 07/4/21 |