Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy

Jiayi Tang, Kiwamu Nishimoto, Shuichi Ogawa, Yoshigoe Akitaka, Shinnji Ishidzuka, Daiki Watanabe, Yuden Teraoka, Yuji Takakuwa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siß, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.

Original languageEnglish
Pages (from-to)1147-1150
Number of pages4
JournalSurface and Interface Analysis
Issue number12-13
Publication statusPublished - 2014 Dec 1


  • Interface oxidation
  • Interface strain
  • Real-Time photoelectron spectroscopy
  • Si(111)7 × 7


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