Abstract
Self-aligned metal/IDP (SMI) technology is proposed to achieve high-speed bipolar transistors. SMI technology produces stacked metal/in-situ doped poly-Si (IDP) base electrodes that have a small thermal budget to obtain low base resistance and a shallow link base for small-collector capacitance and high-cutoff frequency. A 16.2-ps delay time in an ECL ring oscillator, and a delay time of 14.3 ps in a differential ECL ring oscillator were achieved by using SMI technology with an ion-implanted base.
| Original language | English |
|---|---|
| Pages (from-to) | 699-702 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1995 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 1995 Dec 10 → 1995 Dec 13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering