Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax

Katsuya Oda, Eiji Ohue, Isao Suzumura, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journalConference articlepeer-review

27 Citations (Scopus)


Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si1-x-yGexCy layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si1-x-yGexCy SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.

Original languageEnglish
Pages (from-to)332-335
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2001 Jan 1
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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