Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax

Katsuya Oda; Eiji Ohue; Isao Suzumura; Reiko Hayami; Akihiro Kodama; Hiromi Shimamoto; Katsuyoshi Washio

Self-aligned selective-epitaxial-growth Si_1-x-yGe_xC_y HBT technology featuring 170-GHz f_max

Katsuya Oda, Eiji Ohue, Isao Suzumura, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journal › Conference article › peer-review

Abstract

Si_1-x-yGe_xC_y selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si_1-x-yGe_xC_y layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si_1-x-yGe_xC_y SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.

Original language	English
Pages (from-to)	332-335
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

@article{c10763172cfb4020bb9a65b920ee80c5,

title = "Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax ",

abstract = "Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si1-x-yGexCy layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si1-x-yGexCy SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.",

author = "Katsuya Oda and Eiji Ohue and Isao Suzumura and Reiko Hayami and Akihiro Kodama and Hiromi Shimamoto and Katsuyoshi Washio",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "332--335",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax

AU - Oda, Katsuya

AU - Ohue, Eiji

AU - Suzumura, Isao

AU - Hayami, Reiko

AU - Kodama, Akihiro

AU - Shimamoto, Hiromi

AU - Washio, Katsuyoshi

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si1-x-yGexCy layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si1-x-yGexCy SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.

AB - Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si1-x-yGexCy layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si1-x-yGexCy SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.

UR - http://www.scopus.com/inward/record.url?scp=0035717186&partnerID=8YFLogxK

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M3 - Conference article

AN - SCOPUS:0035717186

SN - 0163-1918

SP - 332

EP - 335

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Self-aligned selective-epitaxial-growth Si_1-x-yGe_xC_y HBT technology featuring 170-GHz f_max

Abstract

ASJC Scopus subject areas

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