We develop a device model for p-i-n tunneling transit-time diodes based on graphene single- and multiple-layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the self-consistent charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the ac frequency-dependent admittance as functions of the GTUNNETT structural parameters, in particular, the number of graphene layers.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2014|
|Event||2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, RJUS TeraTech 2013 - Moscow, Russian Federation|
Duration: 2013 Jun 3 → 2013 Jun 6