Self-diffusion in extrinsic silicon using isotopically enriched 30Si layer

Yukio Nakabayashi, Hirman I. Osman, Toru Segawa, Kazumasa Saito, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research output: Contribution to journalLetterpeer-review

8 Citations (Scopus)


Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900°C using an isotopically enriched 30Si layer. 30Si profiles are determined by secondary ion mass spectrometry. Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.

Original languageEnglish
Pages (from-to)L181-L182
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number3 A
Publication statusPublished - 2001 Mar 1
Externally publishedYes


  • Doping effect
  • Isotopic heterostructure
  • Self-diffusion
  • Silicon
  • Stable Si tracer

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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