Self-diffusion in extrinsic silicon using isotopically enriched 30Si layer

Yukio Nakabayashi; Hirman I. Osman; Toru Segawa; Kazumasa Saito; Satoru Matsumoto; Junichi Murota; Kazumi Wada; Takao Abe

doi:10.1143/jjap.40.l181

Self-diffusion in extrinsic silicon using isotopically enriched ³⁰Si layer

Yukio Nakabayashi, Hirman I. Osman, Toru Segawa, Kazumasa Saito, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research output: Contribution to journal › Letter › peer-review

8 Citations (Scopus)

Abstract

Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900°C using an isotopically enriched ³⁰Si layer. ³⁰Si profiles are determined by secondary ion mass spectrometry. Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.

Original language	English
Pages (from-to)	L181-L182
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.40.l181
Publication status	Published - 2001 Mar 1
Externally published	Yes

Keywords

Doping effect
Isotopic heterostructure
Self-diffusion
Silicon
Stable Si tracer

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.l181

Cite this

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title = "Self-diffusion in extrinsic silicon using isotopically enriched 30Si layer",

abstract = "Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900°C using an isotopically enriched 30Si layer. 30Si profiles are determined by secondary ion mass spectrometry. Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.",

keywords = "Doping effect, Isotopic heterostructure, Self-diffusion, Silicon, Stable Si tracer",

author = "Yukio Nakabayashi and Osman, {Hirman I.} and Toru Segawa and Kazumasa Saito and Satoru Matsumoto and Junichi Murota and Kazumi Wada and Takao Abe",

year = "2001",

month = mar,

day = "1",

doi = "10.1143/jjap.40.l181",

language = "English",

volume = "40",

pages = "L181--L182",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Self-diffusion in extrinsic silicon using isotopically enriched 30Si layer

AU - Nakabayashi, Yukio

AU - Osman, Hirman I.

AU - Segawa, Toru

AU - Saito, Kazumasa

AU - Matsumoto, Satoru

AU - Murota, Junichi

AU - Wada, Kazumi

AU - Abe, Takao

PY - 2001/3/1

Y1 - 2001/3/1

N2 - Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900°C using an isotopically enriched 30Si layer. 30Si profiles are determined by secondary ion mass spectrometry. Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.

AB - Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900°C using an isotopically enriched 30Si layer. 30Si profiles are determined by secondary ion mass spectrometry. Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.

KW - Doping effect

KW - Isotopic heterostructure

KW - Self-diffusion

KW - Silicon

KW - Stable Si tracer

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U2 - 10.1143/jjap.40.l181

DO - 10.1143/jjap.40.l181

M3 - Letter

AN - SCOPUS:0035271846

SN - 0021-4922

VL - 40

SP - L181-L182

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 3 A

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