Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon layer

Yukio Nakabayashi; Hirman I. Osman; Toru Segawa; Kazunari Toyonaga; Satoru Matsumoto; Junichi Murota; Kazumi Wada; Takao Abe

doi:10.1557/proc-669-j3.3

Self-diffusion in intrinsic and extrinsic silicon using isotopically pure ³⁰silicon layer

Yukio Nakabayashi, Hirman I. Osman, Toru Segawa, Kazunari Toyonaga, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure ³⁰Si layer. ³⁰Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

Original language	English
Pages (from-to)	J331-J336
Journal	Materials Research Society Symposium - Proceedings
Volume	669
DOIs	https://doi.org/10.1557/proc-669-j3.3
Publication status	Published - 2001
Externally published	Yes
Event	Si Front-end Processing - Physics and Technology of Dopant-Defect Interactions III - San Francisco, CA, United States Duration: 2001 Apr 17 → 2001 Apr 19

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-669-j3.3

Cite this

@article{285d93299d8b4d03862a924a7bb7265f,

title = "Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon layer",

abstract = "Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.",

author = "Yukio Nakabayashi and Osman, {Hirman I.} and Toru Segawa and Kazunari Toyonaga and Satoru Matsumoto and Junichi Murota and Kazumi Wada and Takao Abe",

note = "Funding Information: We would like to thank M. Suzuki and A. Takano of NTT-AT for measuring SIMS profiles. We also thank T. Ikeda and Y. Hirose of Nippon Sanso for gas chromatography analysis, and K. Saito and N. Fujiwara for their experimental assistance. This work was partly supported by a Grant-in-Aid for Scientific Research (A) (10305030) from the Ministry of Education, Science, Sports and Culture, and by the Foundation for the Promotion of Material Science and Technology of Japan.; Si Front-end Processing - Physics and Technology of Dopant-Defect Interactions III ; Conference date: 17-04-2001 Through 19-04-2001",

year = "2001",

doi = "10.1557/proc-669-j3.3",

language = "English",

volume = "669",

pages = "J331--J336",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon layer

AU - Nakabayashi, Yukio

AU - Osman, Hirman I.

AU - Segawa, Toru

AU - Toyonaga, Kazunari

AU - Matsumoto, Satoru

AU - Murota, Junichi

AU - Wada, Kazumi

AU - Abe, Takao

N1 - Funding Information: We would like to thank M. Suzuki and A. Takano of NTT-AT for measuring SIMS profiles. We also thank T. Ikeda and Y. Hirose of Nippon Sanso for gas chromatography analysis, and K. Saito and N. Fujiwara for their experimental assistance. This work was partly supported by a Grant-in-Aid for Scientific Research (A) (10305030) from the Ministry of Education, Science, Sports and Culture, and by the Foundation for the Promotion of Material Science and Technology of Japan.

PY - 2001

Y1 - 2001

N2 - Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

AB - Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

UR - http://www.scopus.com/inward/record.url?scp=0035557036&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035557036&partnerID=8YFLogxK

U2 - 10.1557/proc-669-j3.3

DO - 10.1557/proc-669-j3.3

M3 - Conference article

AN - SCOPUS:0035557036

SN - 0272-9172

VL - 669

SP - J331-J336

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Si Front-end Processing - Physics and Technology of Dopant-Defect Interactions III

Y2 - 17 April 2001 through 19 April 2001

ER -

Self-diffusion in intrinsic and extrinsic silicon using isotopically pure ³⁰silicon layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this