Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere

R. Kanno, T. Wada, Y. Yamazaki, J. Wang, M. Isshiki, Y. Iijima

Research output: Contribution to journalArticlepeer-review


Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalMaterials Science in Semiconductor Processing
Issue number5-6
Publication statusPublished - 2003 Oct


  • Cadmium telluride
  • Diffusion enhancement
  • Self-diffusion along dislocations
  • Volume self-diffusion


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