@inproceedings{b99231602e1347b4a14c9f91cd035b37,
title = "Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices",
abstract = "Silicon self-diffusivity at 775 - 875°C is determined based on the shift of optical phonons of diffusion annealed 28Si 20/30Si20 isotope superlattices by Raman spectroscopy. The planar bond-charge model is employed for theoretical calculations of the optical phonon frequencies which strongly depend on the interdiffusion between the interfaces of 28Si and 30Si layers. The atomic mass distribution at the interfaces is calculated based on Fick's diffusion law. Our values at low temperatures deviate from the previously reported single Arrhenius relation, indicating the change of the diffusion mechanism.",
keywords = "Raman scattering, Self-diffusion, Silicon isotope superlattices",
author = "Yasuo Shimizu and Itoh, {Kohei M.}",
year = "2007",
month = dec,
day = "1",
doi = "10.1063/1.2729840",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "205--206",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}