Self formation and optical properties of II-VI semiconductor wire structures

Baoping Zhang, Wenxin Wang, Takashi Yasuda, Yanqiu Li, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe, Keiichi Edamatsu, Tadashi Itoh

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Based on simultaneous selective growth and composition modulation, Zn1-xCdxSe wire structures are spontaneously formed on cleavage-induced GaAs (110) surfaces by deposition of a Zn1-yCdySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a large piezoelectric effect, implying a potential for applications in nonlinear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.

Original languageEnglish
Pages (from-to)L1490-L1493
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number11 SUPPL. B
Publication statusPublished - 1997 Nov 15


  • Composition modulation
  • II-VI compound
  • MBE
  • Quantum wire
  • Selective growth

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Self formation and optical properties of II-VI semiconductor wire structures'. Together they form a unique fingerprint.

Cite this