Self formation and optical properties of II-VI semiconductor wire structures

Baoping Zhang; Wenxin Wang; Takashi Yasuda; Yanqiu Li; Yusaburo Segawa; Hiroyuki Yaguchi; Kentaro Onabe; Keiichi Edamatsu; Tadashi Itoh

doi:10.1143/jjap.36.l1490

Self formation and optical properties of II-VI semiconductor wire structures

Baoping Zhang, Wenxin Wang, Takashi Yasuda, Yanqiu Li, Yusaburo Segawa, Hiroyuki Yaguchi, Kentaro Onabe, Keiichi Edamatsu, Tadashi Itoh

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Based on simultaneous selective growth and composition modulation, Zn_1-xCd_xSe wire structures are spontaneously formed on cleavage-induced GaAs (110) surfaces by deposition of a Zn_1-yCd_ySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a large piezoelectric effect, implying a potential for applications in nonlinear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.

Original language	English
Pages (from-to)	L1490-L1493
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	11 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1490
Publication status	Published - 1997 Nov 15

Keywords

Composition modulation
II-VI compound
MBE
Quantum wire
Selective growth

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.36.l1490

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title = "Self formation and optical properties of II-VI semiconductor wire structures",

abstract = "Based on simultaneous selective growth and composition modulation, Zn1-xCdxSe wire structures are spontaneously formed on cleavage-induced GaAs (110) surfaces by deposition of a Zn1-yCdySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a large piezoelectric effect, implying a potential for applications in nonlinear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.",

keywords = "Composition modulation, II-VI compound, MBE, Quantum wire, Selective growth",

author = "Baoping Zhang and Wenxin Wang and Takashi Yasuda and Yanqiu Li and Yusaburo Segawa and Hiroyuki Yaguchi and Kentaro Onabe and Keiichi Edamatsu and Tadashi Itoh",

year = "1997",

month = nov,

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doi = "10.1143/jjap.36.l1490",

language = "English",

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T1 - Self formation and optical properties of II-VI semiconductor wire structures

AU - Zhang, Baoping

AU - Wang, Wenxin

AU - Yasuda, Takashi

AU - Li, Yanqiu

AU - Segawa, Yusaburo

AU - Yaguchi, Hiroyuki

AU - Onabe, Kentaro

AU - Edamatsu, Keiichi

AU - Itoh, Tadashi

PY - 1997/11/15

Y1 - 1997/11/15

N2 - Based on simultaneous selective growth and composition modulation, Zn1-xCdxSe wire structures are spontaneously formed on cleavage-induced GaAs (110) surfaces by deposition of a Zn1-yCdySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a large piezoelectric effect, implying a potential for applications in nonlinear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.

AB - Based on simultaneous selective growth and composition modulation, Zn1-xCdxSe wire structures are spontaneously formed on cleavage-induced GaAs (110) surfaces by deposition of a Zn1-yCdySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a large piezoelectric effect, implying a potential for applications in nonlinear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.

KW - Composition modulation

KW - II-VI compound

KW - MBE

KW - Quantum wire

KW - Selective growth

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 11 SUPPL. B

ER -

Self formation and optical properties of II-VI semiconductor wire structures

Abstract

Keywords

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