Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Takashi Yokogawa; Kiyohisa Ishibashi; Masao Sakuraba; Junichi Murota; Yasuhiro Inokuchi; Yasuo Kunii; Harushige Kurokawa

doi:10.1016/j.apsusc.2008.02.131

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

Information Devices Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Utilizing BCl ₃ reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH ₄ reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH ₄ reaction. It is also found that Si atom amount deposited by SiH ₄ reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.

Original language	English
Pages (from-to)	6090-6093
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.131
Publication status	Published - 2008 Jul 30

Keywords

Atomic-layer doping
B
BCl
Chemical vapor deposition (CVD)
Ge
SiH
X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2008.02.131

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@article{fae4534713824f6db10458144a12606e,

title = "Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system",

abstract = " Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH 4 reaction. It is also found that Si atom amount deposited by SiH 4 reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.",

keywords = "Atomic-layer doping, B, BCl, Chemical vapor deposition (CVD), Ge, SiH, X-ray photoelectron spectroscopy (XPS)",

author = "Takashi Yokogawa and Kiyohisa Ishibashi and Masao Sakuraba and Junichi Murota and Yasuhiro Inokuchi and Yasuo Kunii and Harushige Kurokawa",

year = "2008",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2008.02.131",

language = "English",

volume = "254",

pages = "6090--6093",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

AU - Yokogawa, Takashi

AU - Ishibashi, Kiyohisa

AU - Sakuraba, Masao

AU - Murota, Junichi

AU - Inokuchi, Yasuhiro

AU - Kunii, Yasuo

AU - Kurokawa, Harushige

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH 4 reaction. It is also found that Si atom amount deposited by SiH 4 reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.

AB - Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH 4 reaction. It is also found that Si atom amount deposited by SiH 4 reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.

KW - Atomic-layer doping

KW - B

KW - BCl

KW - Chemical vapor deposition (CVD)

KW - Ge

KW - SiH

KW - X-ray photoelectron spectroscopy (XPS)

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UR - http://www.scopus.com/inward/citedby.url?scp=45049088465&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.131

DO - 10.1016/j.apsusc.2008.02.131

M3 - Article

AN - SCOPUS:45049088465

SN - 0169-4332

VL - 254

SP - 6090

EP - 6093

JO - Applied Surface Science

JF - Applied Surface Science

IS - 19

ER -

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Abstract

Keywords

ASJC Scopus subject areas

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