Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH 4 reaction. It is also found that Si atom amount deposited by SiH 4 reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.

Original languageEnglish
Pages (from-to)6090-6093
Number of pages4
JournalApplied Surface Science
Issue number19
Publication statusPublished - 2008 Jul 30


  • Atomic-layer doping
  • B
  • BCl
  • Chemical vapor deposition (CVD)
  • Ge
  • SiH
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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