Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates

S. P. Guo, H. Ohno, A. Shen, F. Matsukura, Y. Ohno

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16 Citations (Scopus)


We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.

Original languageEnglish
Pages (from-to)797-802
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 1998
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30


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