Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

K. Tsukagoshi; S. L. Li; H. Miyazaki; A. Aparecido-Ferreira; S. Nakaharai

doi:10.1088/0022-3727/47/9/094003

Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

K. Tsukagoshi, S. L. Li, H. Miyazaki, A. Aparecido-Ferreira, S. Nakaharai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A practical wide bandgap was induced in bilayer graphene using a perpendicular electric field. A self-assembled gate insulator was used to apply a large electric field. The wide bandgap allows the operation of fundamental logic gates composed of bilayer graphene transistors. The results reviewed here indicate the potential for graphene electronics to be realized as emerging transistors with an atomically thin semiconductor.

Original language	English
Article number	094003
Journal	Journal of Physics D: Applied Physics
Volume	47
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/47/9/094003
Publication status	Published - 2014 Mar 5
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/47/9/094003

Cite this

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abstract = "A practical wide bandgap was induced in bilayer graphene using a perpendicular electric field. A self-assembled gate insulator was used to apply a large electric field. The wide bandgap allows the operation of fundamental logic gates composed of bilayer graphene transistors. The results reviewed here indicate the potential for graphene electronics to be realized as emerging transistors with an atomically thin semiconductor.",

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AU - Nakaharai, S.

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Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

Abstract

ASJC Scopus subject areas

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