Abstract
Using commercially available wafers, imaging of various semiconductor surfaces was attempted by field ion microscopy (FIM). High quality images were obtained for Si, Ge, GaAs and GaP.
| Original language | English |
|---|---|
| Title of host publication | Japanese Journal of Applied Physics, Part 2: Letters |
| Pages | 775-776 |
| Number of pages | 2 |
| Volume | 22 |
| Edition | 12 |
| Publication status | Published - 1983 Dec |
ASJC Scopus subject areas
- Engineering(all)