Semiconductor quantum dots for electron spin qubits

W. G. Van Der Wiel, M. Stopa, T. Kodera, T. Hatano, S. Tarucha

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler-London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates.

Original languageEnglish
Article number28
JournalNew Journal of Physics
Publication statusPublished - 2006 Feb 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Semiconductor quantum dots for electron spin qubits'. Together they form a unique fingerprint.

Cite this