Abstract
In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The operating principles of a spin field effect transistor, a spin filter, and a spin interference device are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 31-36 |
| Number of pages | 6 |
| Journal | NTT Technical Review |
| Volume | 2 |
| Issue number | 6 |
| Publication status | Published - 2004 Jun 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Computer Science Applications
- Computer Networks and Communications
- Electrical and Electronic Engineering