Semiconductor spintronics using ferromagnetic semiconductor heterostrucutures

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A report on semiconductor spintronics using ferromagnetic semiconductor heterostructures was presented. A mean field theory based on exchange between carrier spin and Mn spin was shown. The ferromagnetic phase transition was electrically switched by the use of insulating-gate field-effect transistor structures. Electrical electron spin injection was realized in a spin Esaki diode structure.

Original languageEnglish
Pages (from-to)FA03
JournalDigests of the Intermag Conference
Publication statusPublished - 2002
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2


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