Abstract
Separation between surface adsorption and reaction in atomic-layer nitridation of Si(100) in an NH3 environment (50- 500 Pa) has been investigated by flash heating using an ultraclean low-pressure cold-wall reactor system. The N atom concentration (nN) on Si(100) at 400°C initially increases with flash heating by light irradiation of 60J/cm2 per shot and then tends to saturate at a certain value (∼2.7 × 1015 cm-2). It has been observed that in nitridation with flash heating, a Langmuir-type physical adsorption layer is formed on Si(100), similar to thermal nitridation without flash heating, and reacts at a certain rate. The physically adsorbed NH3 coverage is the same for both cases with and without flash heating. The flash heating markedly increases the reaction efficiency of physically adsorbed NH3 as well as the saturation value of nN. The bonding characteristics observed by X-ray photoelectron spectroscopy in the cases with and without flash heating were almost similar when nN was the same.
| Original language | English |
|---|---|
| Pages (from-to) | 515-517 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 38 |
| Issue number | 1 B |
| DOIs | |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 1998 May 31 → 1998 Jun 4 |
Keywords
- Atomic-layer
- Flash heating
- Langmuir-type adsorption
- NH
- Nitridation
- Si