Shifting donor-acceptor photoluminescence in N-doped ZnO

Takayuki Makino, Atsushi Tsukazaki, Akira Ohtomo, M. Kawasaki, Hideomi Koinuma

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6 Citations (Scopus)


We have grown nitrogen-doped ZnO films by two kinds of epitaxial methods on lattice-matched ScAlMgO4 substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of the excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence can be explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process that provides showing better electrical properties was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptors has been evaluated to be ≈170 meV, which is independent of the nitrogen concentration.

Original languageEnglish
Article number073701
JournalJournal of the Physical Society of Japan
Issue number7
Publication statusPublished - 2006 Jul


  • Acceptors
  • Donors
  • Doping
  • Fluctuation
  • Photoluminescence
  • Zinc oxide


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