Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Jaecheon Sohn, S. H. Han, Masahiro Yamaguchi, S. H. Lim

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.

Original languageEnglish
Article number143520
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2007


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