Si epitaxial growth on self-limitedly B adsorbed Si1 - xGex(100) by ultraclean low-pressure CVD system

Kiyohisa Ishibashi; Masao Sakuraba; Junichi Murota; Yasuhiro Inokuchi; Yasuo Kunii; Harushige Kurokawa

doi:10.1016/j.tsf.2008.08.012

Si epitaxial growth on self-limitedly B adsorbed Si_{1 - x}Ge_x(100) by ultraclean low-pressure CVD system

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

RIEC - Computing System Platforms Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

B atomic-layer doping in Si/Si_{1 - x}Ge_x(100) (x = 0.3, 1) heterostructure utilizing BCl₃ reaction on Si_{1 - x}Ge_x(100) and subsequent Si epitaxial growth by SiH₄ reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5 × 10¹⁴ cm^{- 2}) B formed Si_{1 - x}Ge_x(100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH₄ exposure at 300 °C after BCl₃ exposure. Furthermore, it was found that the SiH₄ reaction at 300 °C on Ge(100) is enhanced by B adsorption.

Original language	English
Pages (from-to)	229-231
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.012
Publication status	Published - 2008 Nov 3

Keywords

Atomic layer doping
B
BCl
Chemical vapor deposition (CVD)
SiGe
SiH
X-ray photoelectron spectroscopy (XPS)

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10.1016/j.tsf.2008.08.012

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@article{b5732d0724db4ac38d737a81c8b49fdf,

title = "Si epitaxial growth on self-limitedly B adsorbed Si1 - xGex(100) by ultraclean low-pressure CVD system",

abstract = "B atomic-layer doping in Si/Si1 - xGex(100) (x = 0.3, 1) heterostructure utilizing BCl3 reaction on Si1 - xGex(100) and subsequent Si epitaxial growth by SiH4 reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5 × 1014 cm- 2) B formed Si1 - xGex(100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH4 exposure at 300 °C after BCl3 exposure. Furthermore, it was found that the SiH4 reaction at 300 °C on Ge(100) is enhanced by B adsorption.",

keywords = "Atomic layer doping, B, BCl, Chemical vapor deposition (CVD), SiGe, SiH, X-ray photoelectron spectroscopy (XPS)",

author = "Kiyohisa Ishibashi and Masao Sakuraba and Junichi Murota and Yasuhiro Inokuchi and Yasuo Kunii and Harushige Kurokawa",

note = "Funding Information: This work was partially supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.012",

language = "English",

volume = "517",

pages = "229--231",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Si epitaxial growth on self-limitedly B adsorbed Si1 - xGex(100) by ultraclean low-pressure CVD system

AU - Ishibashi, Kiyohisa

AU - Sakuraba, Masao

AU - Murota, Junichi

AU - Inokuchi, Yasuhiro

AU - Kunii, Yasuo

AU - Kurokawa, Harushige

N1 - Funding Information: This work was partially supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - B atomic-layer doping in Si/Si1 - xGex(100) (x = 0.3, 1) heterostructure utilizing BCl3 reaction on Si1 - xGex(100) and subsequent Si epitaxial growth by SiH4 reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5 × 1014 cm- 2) B formed Si1 - xGex(100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH4 exposure at 300 °C after BCl3 exposure. Furthermore, it was found that the SiH4 reaction at 300 °C on Ge(100) is enhanced by B adsorption.

AB - B atomic-layer doping in Si/Si1 - xGex(100) (x = 0.3, 1) heterostructure utilizing BCl3 reaction on Si1 - xGex(100) and subsequent Si epitaxial growth by SiH4 reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5 × 1014 cm- 2) B formed Si1 - xGex(100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH4 exposure at 300 °C after BCl3 exposure. Furthermore, it was found that the SiH4 reaction at 300 °C on Ge(100) is enhanced by B adsorption.

KW - Atomic layer doping

KW - B

KW - BCl

KW - Chemical vapor deposition (CVD)

KW - SiGe

KW - SiH

KW - X-ray photoelectron spectroscopy (XPS)

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U2 - 10.1016/j.tsf.2008.08.012

DO - 10.1016/j.tsf.2008.08.012

M3 - Article

AN - SCOPUS:54849408946

SN - 0040-6090

VL - 517

SP - 229

EP - 231

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Si epitaxial growth on self-limitedly B adsorbed Si_{1 - x}Ge_x(100) by ultraclean low-pressure CVD system

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Keywords

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