Si self-diffusivity using isotopically pure 30Si epitaxial layers

S. R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, S. Matumoto, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, T. Abe

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15 Citations (Scopus)


In order to understand the properties of point defects in Si, it is important to clarify temperature dependence of Si intrinsic self-diffusion coefficient over a wide temperature range. In this work, we used highly isotopically enriched 30 Si epi-layers as a diffusion source to bulk and epi-layers Si and evaluated self-diffusion 30Si epi-layers were grown on each CZ-Si substrate and non-doped epi-layer grown on CZ-Si substrate using low pressure CVD with 30SiH4. Diffusion was performed in resistance furnaces under pure Ar (99.9%) atmosphere at temperature between 867 and 1300°C. After annealing, the concentrations of the respective Si isotopes were measured with SIMS. Diffusion coefficients of 30Si (called Si self-diffusivity, DSD) were determined using numerical fitting process with 30Si SIMS profiles. We found no major differences in self-diffusivity between in bulk Si and epi-layers Si. It was shown that within 867-1300°C range, DSD can be described by an Arrhenius equation with one single activation enthalpy, DSD = 14 exp (-4.37 eV/kT). The present result is in good agreement with that of Bracht et al.

Original languageEnglish
Pages (from-to)330-333
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue numberSPEC. ISS.
Publication statusPublished - 2004 Dec 15


  • CZ-Si substrate
  • Self-diffusivity
  • Si isotopes


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