Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5 nm: Adjustment of amount of residual oxygen atoms in metal layer

Physics

• Oxide 83%
• Metal 83%
• Electrodes 33%
• Oxygen Atom 33%
• Oxygen 33%
• Adjusting 33%
• Hysteresis 16%
• Free Energy 16%
• Silica 16%
• Electric Potential 16%
• Silicon 16%
• Energy Levels 16%
• Lanthanum 16%
• Dielectrics 16%
• Defects 16%
• Actuators 16%
• Capacitance-Voltage Characteristics 16%
• Parameter 16%
• Existence 16%

Chemistry

• Thickness 100%
• Oxide 83%
• Metal 83%
• Dioxygen 33%
• Oxygen Atom 33%
• Amount 33%
• Hysteresis 16%
• Gibbs Free Energy 16%
• Voltage 16%
• Electrode Material 16%
• Dielectric Material 16%
• Chemical Reaction 16%
• Electron Energy Level 16%

Material Science

• Silicate 50%
• Dielectric Material 16%
• Defect 16%