Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas

Junichi Murota; Masao Sakuraba; Shoichi Ono

doi:10.1063/1.109416

Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH₄ gas

Junichi Murota, Masao Sakuraba, Shoichi Ono

RIEC - Computing System Platforms Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The separation between surface adsorption and reaction of SiH₄ on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. About 0.4 atomic-layer epitaxy per flash-lamp light shot was observed on Si(100) at a substrate temperature of 385°C and at SiH₄ partial pressure of 500 Pa. The dependencies of SiH₄ surface coverage on the SiH₄ partial pressure and shot-to-shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.

Original language	English
Pages (from-to)	2353-2355
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	19
DOIs	https://doi.org/10.1063/1.109416
Publication status	Published - 1993

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abstract = "The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. About 0.4 atomic-layer epitaxy per flash-lamp light shot was observed on Si(100) at a substrate temperature of 385°C and at SiH4 partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot-to-shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.",

author = "Junichi Murota and Masao Sakuraba and Shoichi Ono",

year = "1993",

doi = "10.1063/1.109416",

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journal = "Applied Physics Letters",

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AU - Murota, Junichi

AU - Sakuraba, Masao

AU - Ono, Shoichi

PY - 1993

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N2 - The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. About 0.4 atomic-layer epitaxy per flash-lamp light shot was observed on Si(100) at a substrate temperature of 385°C and at SiH4 partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot-to-shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.

AB - The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. About 0.4 atomic-layer epitaxy per flash-lamp light shot was observed on Si(100) at a substrate temperature of 385°C and at SiH4 partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot-to-shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH₄ gas

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