TY - JOUR
T1 - Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation
AU - Sasaki, Shogo
AU - Sakuraba, Masao
AU - Akima, Hisanao
AU - Sato, Shigeo
N1 - Funding Information:
This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University and the Japan Society for the Promotion of Science (JSPS) Core-to-Core Program, A. Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”.
Publisher Copyright:
© 2016 Elsevier Ltd
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5 at% by surface reaction of SiH4 and CH4 under low-energy Ar plasma irradiation without substrate heating in electron-cyclotron-resonance (ECR) plasma chemical-vapor deposition (CVD). Moreover, it was found that the Si-C alloy (C fraction of 1.4 at%) with an about 1%-larger vertical lattice constant than unstrained Si could be epitaxially grown on Si(100) under perfect lattice matching, which was different from the generally-reported results of tensile-strained Si-C alloy epitaxy on Si(100) at relatively higher temperatures. It was also found that deposition interruption effectively improved crystal quality of the film with an increased strain.
AB - Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5 at% by surface reaction of SiH4 and CH4 under low-energy Ar plasma irradiation without substrate heating in electron-cyclotron-resonance (ECR) plasma chemical-vapor deposition (CVD). Moreover, it was found that the Si-C alloy (C fraction of 1.4 at%) with an about 1%-larger vertical lattice constant than unstrained Si could be epitaxially grown on Si(100) under perfect lattice matching, which was different from the generally-reported results of tensile-strained Si-C alloy epitaxy on Si(100) at relatively higher temperatures. It was also found that deposition interruption effectively improved crystal quality of the film with an increased strain.
KW - Heteroepitaxial growth
KW - Plasma chemical vapor deposition
KW - Reciprocal space map
KW - Silicon
KW - Silicon-Carbon alloy
KW - X-ray diffraction
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U2 - 10.1016/j.mssp.2016.10.046
DO - 10.1016/j.mssp.2016.10.046
M3 - Article
AN - SCOPUS:85010715490
SN - 1369-8001
VL - 70
SP - 188
EP - 192
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -