Silicon crystal growth from the melt: Analysis from atomic and macro scales

K. Kakimoto; L. Liu; T. Kitashima; A. Murakawa; Y. Hashimoto

doi:10.1002/crat.200410343

Silicon crystal growth from the melt: Analysis from atomic and macro scales

K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa, Y. Hashimoto

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.

Original language	English
Pages (from-to)	307-312
Number of pages	6
Journal	Crystal Research and Technology
Volume	40
Issue number	4-5
DOIs	https://doi.org/10.1002/crat.200410343
Publication status	Published - 2005 Apr
Externally published	Yes

Keywords

Global model
Silicon
Thermal conductivity

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1002/crat.200410343

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abstract = "The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.",

keywords = "Global model, Silicon, Thermal conductivity",

author = "K. Kakimoto and L. Liu and T. Kitashima and A. Murakawa and Y. Hashimoto",

year = "2005",

month = apr,

doi = "10.1002/crat.200410343",

language = "English",

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journal = "Crystal Research and Technology",

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T2 - Analysis from atomic and macro scales

AU - Kakimoto, K.

AU - Liu, L.

AU - Kitashima, T.

AU - Murakawa, A.

AU - Hashimoto, Y.

PY - 2005/4

Y1 - 2005/4

N2 - The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.

AB - The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.

KW - Global model

KW - Silicon

KW - Thermal conductivity

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DO - 10.1002/crat.200410343

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ER -

Silicon crystal growth from the melt: Analysis from atomic and macro scales

Abstract

Keywords

ASJC Scopus subject areas

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