@inproceedings{7330458a338547028a85bb93684eccb2,
title = "Silicon emission mechanism for oxidation process of non-planar silicon",
abstract = "The advance in the understanding of the mechanism of the silicon oxidation process toward the fine control of 3D MOSFETs is explained. The silicon emission mechanism can be applied to the oxidation process of silicon pillars as well as that of planar silicon. Since the geometrical effect is inevitable for the 3D MOSFETs, the silicon emission mechanism is the key to achieve highperformance non-planar 3D MOSFETs.",
author = "H. Kageshima and K. Shiraishi and T. Endoh",
note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
year = "2016",
doi = "10.1149/07505.0215ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "215--226",
editor = "S. Kar and K. Kita and D. Landheer and D. Misra",
booktitle = "Semiconductors, Dielectrics, and Metals for Nanoelectronics 14",
edition = "5",
}