We fabricated wavelength-tunable laser diodes using a Si photonic wavelength filer that consists of ring resonators and an asymmetric Mach-Zehnder interferometer. The footprint of the optical cavity including the semiconductor optical amplifier is small, 2.6 mm × 0.5 mm, which is about 1/9 of those for tunable laser diodes made of silicon oxynitride. The wavelength could be tuned over approximately 62 nm, which covers the entire L-band of the optical communication wavelength range. The maximum output power reaches 42.2 mW. Furthermore, a spectral line width narrower than 100 kHz was obtained. Such tunable laser diodes with narrow spectral line widths are suitable as light sources integrated into other digital coherent devices.
|Journal||IEEE Journal of Selected Topics in Quantum Electronics|
|Publication status||Published - 2014 Jul 1|
- digital coherent system
- Semiconductor laser diode
- silicon photonics
- wavelength-tunable laser diode (LD)