Silicon self-diffusion in heavily B-doped Si using highly pure 30Si epitaxial layer

S. Matsumoto; S. R. Aid; S. Seto; K. Toyonaga; Y. Nakabayashi; M. Sakuraba; Y. Shimamune; Y. Hashiba; J. Murota; K. Wada; T. Abe

doi:10.1149/1.2195666

Silicon self-diffusion in heavily B-doped Si using highly pure ³⁰Si epitaxial layer

S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, T. Abe

RIEC - Computing System Platforms Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Si self-diffusivity in heavily B-doped Si at 867-1067°C has been determined directly using highly pure isotope ³⁰Si as a diffusion source. Samples consist of ³⁰Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self-diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. Copyright The Electrochemical Society.

Original language	English
Title of host publication	Silicon Materials Science and Technology X
Publisher	Electrochemical Society Inc.
Pages	287-297
Number of pages	11
Edition	2
ISBN (Print)	156677439X, 9781566774390
DOIs	https://doi.org/10.1149/1.2195666
Publication status	Published - 2006
Event	10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	ECS Transactions
Number	2
Volume	2
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
Country/Territory	United States
City	Denver, CO
Period	06/5/7 → 06/5/12

Access to Document

10.1149/1.2195666

Cite this

Matsumoto, S., Aid, S. R., Seto, S., Toyonaga, K., Nakabayashi, Y., Sakuraba, M., Shimamune, Y., Hashiba, Y., Murota, J., Wada, K., & Abe, T. (2006). Silicon self-diffusion in heavily B-doped Si using highly pure ³⁰Si epitaxial layer. In Silicon Materials Science and Technology X (2 ed., pp. 287-297). (ECS Transactions; Vol. 2, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2195666

@inproceedings{f76eba66b933404f863b4a319815ad54,

title = "Silicon self-diffusion in heavily B-doped Si using highly pure 30Si epitaxial layer",

abstract = "Si self-diffusivity in heavily B-doped Si at 867-1067°C has been determined directly using highly pure isotope 30Si as a diffusion source. Samples consist of 30Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self-diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. Copyright The Electrochemical Society.",

author = "S. Matsumoto and Aid, {S. R.} and S. Seto and K. Toyonaga and Y. Nakabayashi and M. Sakuraba and Y. Shimamune and Y. Hashiba and J. Murota and K. Wada and T. Abe",

year = "2006",

doi = "10.1149/1.2195666",

language = "English",

isbn = "156677439X",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "287--297",

booktitle = "Silicon Materials Science and Technology X",

edition = "2",

note = "10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",

}

Matsumoto, S, Aid, SR, Seto, S, Toyonaga, K, Nakabayashi, Y, Sakuraba, M, Shimamune, Y, Hashiba, Y, Murota, J, Wada, K & Abe, T 2006, Silicon self-diffusion in heavily B-doped Si using highly pure ³⁰Si epitaxial layer. in Silicon Materials Science and Technology X. 2 edn, ECS Transactions, no. 2, vol. 2, Electrochemical Society Inc., pp. 287-297, 10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 06/5/7. https://doi.org/10.1149/1.2195666

TY - GEN

T1 - Silicon self-diffusion in heavily B-doped Si using highly pure 30Si epitaxial layer

AU - Matsumoto, S.

AU - Aid, S. R.

AU - Seto, S.

AU - Toyonaga, K.

AU - Nakabayashi, Y.

AU - Sakuraba, M.

AU - Shimamune, Y.

AU - Hashiba, Y.

AU - Murota, J.

AU - Wada, K.

AU - Abe, T.

PY - 2006

Y1 - 2006

N2 - Si self-diffusivity in heavily B-doped Si at 867-1067°C has been determined directly using highly pure isotope 30Si as a diffusion source. Samples consist of 30Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self-diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. Copyright The Electrochemical Society.

AB - Si self-diffusivity in heavily B-doped Si at 867-1067°C has been determined directly using highly pure isotope 30Si as a diffusion source. Samples consist of 30Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self-diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. Copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33745469343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745469343&partnerID=8YFLogxK

U2 - 10.1149/1.2195666

DO - 10.1149/1.2195666

M3 - Conference contribution

AN - SCOPUS:33745469343

SN - 156677439X

SN - 9781566774390

T3 - ECS Transactions

SP - 287

EP - 297

BT - Silicon Materials Science and Technology X

PB - Electrochemical Society Inc.

T2 - 10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society

Y2 - 7 May 2006 through 12 May 2006

ER -