Abstract
A new silicone-based negative resist (SNR) for two-layer resist system was synthesized through chloromethylation of oligomeric diphenyl siloxane. The SNR showed excellent dry etching resistance to O RIE owing to its silicone chain. Moreover, it was seen to have high sensitivity and high resolution under electron beam, X-ray and deep UV application due to use of the chloromethyl groups. Submicron patterns having high aspect ratios can easily be fabricated using an SNR/organic polymer two-layer resist system, one of the most promising technologies for submicron lithography in VLSI manufacturing.
| Original language | English |
|---|---|
| Pages (from-to) | 2149-2159 |
| Number of pages | 11 |
| Journal | Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku |
| Volume | 33 |
| Issue number | 9 |
| Publication status | Published - 1984 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)