Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

Linghan Li; Akio Higo; Ryo Takigawa; Eiji Higurashi; Masakazu Sugiyama; Yoshiaki Nakano

doi:10.1109/TRANSDUCERS.2011.5969752

Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

Linghan Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

ENG - Electronic Engineering

The University of Tokyo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O₂/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.

Original language	English
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	2502-2505
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969752
Publication status	Published - 2011
Event	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: 2011 Jun 5 → 2011 Jun 9

Publication series

Name	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	11/6/5 → 11/6/9

Keywords

Silicon/III-V heterointegration
direct bonding
hybrid waveguide
vertical PIN photodiode

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10.1109/TRANSDUCERS.2011.5969752

Cite this

Li, L., Higo, A., Takigawa, R., Higurashi, E., Sugiyama, M., & Nakano, Y. (2011). Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 2502-2505). Article 5969752 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969752

Li, Linghan ; Higo, Akio ; Takigawa, Ryo et al. / Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 2502-2505 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

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title = "Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding",

abstract = "A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O2/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.",

keywords = "Silicon/III-V heterointegration, direct bonding, hybrid waveguide, vertical PIN photodiode",

author = "Linghan Li and Akio Higo and Ryo Takigawa and Eiji Higurashi and Masakazu Sugiyama and Yoshiaki Nakano",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969752",

language = "English",

isbn = "9781457701573",

series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

pages = "2502--2505",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

}

Li, L, Higo, A, Takigawa, R, Higurashi, E, Sugiyama, M & Nakano, Y 2011, Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969752, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 2502-2505, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 11/6/5. https://doi.org/10.1109/TRANSDUCERS.2011.5969752

Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. / Li, Linghan; Higo, Akio; Takigawa, Ryo et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2502-2505 5969752 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

AU - Li, Linghan

AU - Higo, Akio

AU - Takigawa, Ryo

AU - Higurashi, Eiji

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

PY - 2011

Y1 - 2011

N2 - A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O2/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.

AB - A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O2/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.

KW - Silicon/III-V heterointegration

KW - direct bonding

KW - hybrid waveguide

KW - vertical PIN photodiode

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T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

SP - 2502

EP - 2505

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Y2 - 5 June 2011 through 9 June 2011

ER -

Li L, Higo A, Takigawa R, Higurashi E, Sugiyama M, Nakano Y. Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2502-2505. 5969752. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969752

Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

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