Simulation of terahertz plasmons in graphene with grating-gate structures

Akira Satou; Victor Ryzhii; Taiichi Otsuji; Fedir T. Vasko; Vladimir V. Mitin

doi:10.1109/SISPAD.2013.6650624

Simulation of terahertz plasmons in graphene with grating-gate structures

Akira Satou, Victor Ryzhii, Taiichi Otsuji, Fedir T. Vasko, Vladimir V. Mitin

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene in the terahert (THz) range are studied by a numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a singlegrating-gate structure is studied, and the coupling effect of plasmons in the gated and ungated regions are revealed. It is shown that the plasmon frequency as well as its gate-voltage tunability depend strongly on the coupling. It is also demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and short- and finite-range disorder scattering can be on the order of 10¹¹ s^-1, depending on the level of disorders.

Original language	English
Title of host publication	2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages	260-263
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2013.6650624
Publication status	Published - 2013
Event	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom Duration: 2013 Sept 3 → 2013 Sept 5

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/Territory	United Kingdom
City	Glasgow
Period	13/9/3 → 13/9/5

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10.1109/SISPAD.2013.6650624

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Satou, A., Ryzhii, V., Otsuji, T., Vasko, F. T., & Mitin, V. V. (2013). Simulation of terahertz plasmons in graphene with grating-gate structures. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 260-263). Article 6650624 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650624

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title = "Simulation of terahertz plasmons in graphene with grating-gate structures",

abstract = "Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene in the terahert (THz) range are studied by a numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a singlegrating-gate structure is studied, and the coupling effect of plasmons in the gated and ungated regions are revealed. It is shown that the plasmon frequency as well as its gate-voltage tunability depend strongly on the coupling. It is also demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and short- and finite-range disorder scattering can be on the order of 1011 s-1, depending on the level of disorders.",

author = "Akira Satou and Victor Ryzhii and Taiichi Otsuji and Vasko, {Fedir T.} and Mitin, {Vladimir V.}",

year = "2013",

doi = "10.1109/SISPAD.2013.6650624",

language = "English",

isbn = "9781467357364",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

pages = "260--263",

booktitle = "2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013",

note = "18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 ; Conference date: 03-09-2013 Through 05-09-2013",

}

Satou, A, Ryzhii, V, Otsuji, T, Vasko, FT & Mitin, VV 2013, Simulation of terahertz plasmons in graphene with grating-gate structures. in 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013., 6650624, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 260-263, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 13/9/3. https://doi.org/10.1109/SISPAD.2013.6650624

Simulation of terahertz plasmons in graphene with grating-gate structures. / Satou, Akira; Ryzhii, Victor; Otsuji, Taiichi et al.
2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 260-263 6650624 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Simulation of terahertz plasmons in graphene with grating-gate structures

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AU - Ryzhii, Victor

AU - Otsuji, Taiichi

AU - Vasko, Fedir T.

AU - Mitin, Vladimir V.

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N2 - Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene in the terahert (THz) range are studied by a numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a singlegrating-gate structure is studied, and the coupling effect of plasmons in the gated and ungated regions are revealed. It is shown that the plasmon frequency as well as its gate-voltage tunability depend strongly on the coupling. It is also demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and short- and finite-range disorder scattering can be on the order of 1011 s-1, depending on the level of disorders.

AB - Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene in the terahert (THz) range are studied by a numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a singlegrating-gate structure is studied, and the coupling effect of plasmons in the gated and ungated regions are revealed. It is shown that the plasmon frequency as well as its gate-voltage tunability depend strongly on the coupling. It is also demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and short- and finite-range disorder scattering can be on the order of 1011 s-1, depending on the level of disorders.

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T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

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Satou A, Ryzhii V, Otsuji T, Vasko FT, Mitin VV. Simulation of terahertz plasmons in graphene with grating-gate structures. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 260-263. 6650624. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2013.6650624

Simulation of terahertz plasmons in graphene with grating-gate structures

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