@inproceedings{7a539f9385d94ee5a68cd108c7aaccb9,
title = "Simulation study for HTCVD of SiC using first-principles calculation and thermo-fluid analysis",
abstract = "A simulation study for high temperature chemical vapor deposition (HTCVD) of silicon carbide (SiC) is presented. Thermodynamic properties of the species were derived from the first-principles calculations in order to evaluate the activation energy (Ea) in the gas phase reaction. Pathways producing SiC2 and Si2C from SiCl4-C3H 8-H2 system were proposed to investigate the effect of chlorinated species on HTCVD. A thermo-fluid analysis was carried out to estimate the partial pressures of the species. It was found that the main sublimed species of Si, SiC2, Si2C decreased in the SiCl4-C3H8-H2 system compared to the SiH4-C3H8-H2 system. This suggests that the growth rate would decrease in the atmosphere of chlorinated species at around 2500°C.",
keywords = "Activation energy, Bulk growth, Chlorinated species, First-principles calculation, Free energy, Frequency factor, Gas phase reaction, Growth rate, HTCVD, Thermo-fluid analysis",
author = "Yasuo Kitou and Emi Makino and Kenji Inaba and Norikazu Hosokawa and Hidehiko Hiramatsu and Jun Hasegawa and Shoichi Onda and Hideyuki Tsuboi and Hiromitsu Takaba and Akira Miyamoto",
year = "2009",
doi = "10.4028/3-908453-11-9.47",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "47--50",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}