Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency

Noritaka Usami, Tatsuya Takahashi, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Kazuo Nakajima

Research output: Contribution to journalConference articlepeer-review


We report on growth and characterizations of Si/multicrystalline-SiGe (mc-SiGe) heterostructure as a promising candidate to surpass multicrystalline-Si solar cells. A 0.5 μm-thick Si thin film was grown on mc-SiGe using a solid-source molecular beam epitaxy system. Spatial distribution of the status of strain in Si was found to be strongly dependent on the composition and microstructure of underlying mc-SiGe. Large strain distribution and partial strain relaxation were revealed in Si on mc-SiGe with average Ge composition of 0.72. On the other hand, almost uniformly strained-Si film was grown on Mc-SiGe with average Ge composition of 0.30. To avoid introduction of recombination centers at the Si/SiGe interface, it is necessary to avoid strain relaxation by decreasing average Ge composition in mc-SiGe.

Original languageEnglish
Pages (from-to)247-249
Number of pages3
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24


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