We report on growth and characterizations of Si/multicrystalline-SiGe (mc-SiGe) heterostructure as a promising candidate to surpass multicrystalline-Si solar cells. A 0.5 μm-thick Si thin film was grown on mc-SiGe using a solid-source molecular beam epitaxy system. Spatial distribution of the status of strain in Si was found to be strongly dependent on the composition and microstructure of underlying mc-SiGe. Large strain distribution and partial strain relaxation were revealed in Si on mc-SiGe with average Ge composition of 0.72. On the other hand, almost uniformly strained-Si film was grown on Mc-SiGe with average Ge composition of 0.30. To avoid introduction of recombination centers at the Si/SiGe interface, it is necessary to avoid strain relaxation by decreasing average Ge composition in mc-SiGe.
|Number of pages||3|
|Journal||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Publication status||Published - 2002|
|Event||29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States|
Duration: 2002 May 19 → 2002 May 24