Single-crystal field-effect transistors based on organic selenium-containing semiconductor

Roswitha Zeis, Christian Kloc, Kazuo Takimiya, Yoshihito Kunugi, Yasushi Konda, Naoto Niihara, Tetsuo Otsubo

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

Original languageEnglish
Pages (from-to)3712-3714
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number6 A
Publication statusPublished - 2005 Jun


  • Field effect transistor
  • Mobility
  • Organic semiconductor
  • Organic single crystal


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