Single crystal growth and the fermi surface property in LuCoGa5

Tatsuma D. Matsuda, Yoshinori Haga, Hironori Sakai, Dai Aoki, Shugo Ikeda, Etsuji Yamamoto, Hiroaki Shishido, Rikio Settai, Hisatomo Harima, Yoshichika Onuki

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3 Citations (Scopus)


We succeeded in growing a high-quality single crystal of LuCoGa5 with the HoCoGa5-type tetragonal crystal structure by the Ga self-flux method. The lattice parameters, fractional coordinates, and thermal parameters were determined from single-crystal x-ray diffraction measurements. We also measured the electrical resistivity, specific heat, and the de Haas-van Alphen (dHvA) effect. The Fermi surface mainly consists of two nearly cylindrical Fermi surfaces, which are well explained by the results of full-potential linearized augmented plane wave (FLAPW) energy band calculations.

Original languageEnglish
Article number024704
JournalJournal of the Physical Society of Japan
Issue number2
Publication statusPublished - 2008 Feb


  • De Haas-van Alphen effect
  • Energy band calculation
  • LuCoGa
  • Single crystal growth


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