TY - JOUR
T1 - Single crystal growth of GaN by the temperature gradient Na flux method
AU - Aoki, Masato
AU - Yamane, Hisanori
AU - Shimada, Masahiko
AU - Sarayama, Seiji
AU - Iwata, Hirokazu
AU - DiSalvo, Francis J.
N1 - Funding Information:
We are grateful to Nippon Soda Co. Ltd. for a gift of high-purity Na. This work was supported in part by a grant from the Japan Society for the Promotion of Science (JSPS). MA is a JSPS Research Fellow.
PY - 2004/6/1
Y1 - 2004/6/1
N2 - GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800°C). Colorless transparent platelet single crystals having a size of about 2mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0002) reflection of the crystals was 40-60arcsec, showing that the crystals have a good quality.
AB - GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800°C). Colorless transparent platelet single crystals having a size of about 2mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0002) reflection of the crystals was 40-60arcsec, showing that the crystals have a good quality.
KW - A2. Growth from solutions
KW - A2. Single crystal growth
KW - B1. Gallium compounds
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2004.03.035
DO - 10.1016/j.jcrysgro.2004.03.035
M3 - Article
AN - SCOPUS:2442592903
SN - 0022-0248
VL - 266
SP - 461
EP - 466
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -