Single crystal growth of GaN by the temperature gradient Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Hirokazu Iwata, Francis J. DiSalvo

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800°C). Colorless transparent platelet single crystals having a size of about 2mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0002) reflection of the crystals was 40-60arcsec, showing that the crystals have a good quality.

Original languageEnglish
Pages (from-to)461-466
Number of pages6
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 2004 Jun 1


  • A2. Growth from solutions
  • A2. Single crystal growth
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting III-V materials


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