Single crystal growth of manganese gallium nitride using Mn-Ga-Na melt

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Takashi Kajiwara

doi:10.1016/S0925-8388(03)00506-1

Single crystal growth of manganese gallium nitride using Mn-Ga-Na melt

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Takashi Kajiwara

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Manganese gallium nitride (Mn_4-xGa_xN) single crystals as well as Mn-doped GaN single crystals were prepared by heating a Mn-Ga-Na melt at 750°C and 5 MPa of N₂ pressure. The Mn _4-xGa_xN crystals had the cubic anti-perovskite-type structure (space group: Pm3m) with a lattice parameter a = 3.8886(9) Å. The single crystals exhibited magnetic transitions from a ferrimagnetic phase with a spin-glass-like disorder to an antiferromagnetic phase at 107 K, and then to a paramagnetic phase at 270 K. From these magnetic transition temperatures, the composition of the Mn_4-xGa_xN single crystals was estimated to be Mn_3.07Ga_0.93N.

Original language	English
Pages (from-to)	280-282
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	364
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-8388(03)00506-1
Publication status	Published - 2004 Feb 11

Keywords

Crystal growth
Magnetic measurements
Magnetically ordered materials
X-ray diffraction

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/S0925-8388(03)00506-1

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@article{7a7bd40e5bef40ceb44cfed5287153cb,

title = "Single crystal growth of manganese gallium nitride using Mn-Ga-Na melt",

abstract = "Manganese gallium nitride (Mn4-xGaxN) single crystals as well as Mn-doped GaN single crystals were prepared by heating a Mn-Ga-Na melt at 750°C and 5 MPa of N2 pressure. The Mn 4-xGaxN crystals had the cubic anti-perovskite-type structure (space group: Pm3m) with a lattice parameter a = 3.8886(9) {\AA}. The single crystals exhibited magnetic transitions from a ferrimagnetic phase with a spin-glass-like disorder to an antiferromagnetic phase at 107 K, and then to a paramagnetic phase at 270 K. From these magnetic transition temperatures, the composition of the Mn4-xGaxN single crystals was estimated to be Mn3.07Ga0.93N.",

keywords = "Crystal growth, Magnetic measurements, Magnetically ordered materials, X-ray diffraction",

author = "Masato Aoki and Hisanori Yamane and Masahiko Shimada and Takashi Kajiwara",

note = "Funding Information: We thank Y. Hayasaka for the EDX analysis. We are grateful to Nippon Soda Co. Ltd. for a gift of high-purity Na. This work was supported in part by a grant from the Ministry of Education, Culture, Sports, Science and Technology and the Japan Society for the Promotion of Science. MA is a Research Fellow of the Japan Society for the Promotion of Science.",

year = "2004",

month = feb,

day = "11",

doi = "10.1016/S0925-8388(03)00506-1",

language = "English",

volume = "364",

pages = "280--282",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

number = "1-2",

}

TY - JOUR

T1 - Single crystal growth of manganese gallium nitride using Mn-Ga-Na melt

AU - Aoki, Masato

AU - Yamane, Hisanori

AU - Shimada, Masahiko

AU - Kajiwara, Takashi

N1 - Funding Information: We thank Y. Hayasaka for the EDX analysis. We are grateful to Nippon Soda Co. Ltd. for a gift of high-purity Na. This work was supported in part by a grant from the Ministry of Education, Culture, Sports, Science and Technology and the Japan Society for the Promotion of Science. MA is a Research Fellow of the Japan Society for the Promotion of Science.

PY - 2004/2/11

Y1 - 2004/2/11

N2 - Manganese gallium nitride (Mn4-xGaxN) single crystals as well as Mn-doped GaN single crystals were prepared by heating a Mn-Ga-Na melt at 750°C and 5 MPa of N2 pressure. The Mn 4-xGaxN crystals had the cubic anti-perovskite-type structure (space group: Pm3m) with a lattice parameter a = 3.8886(9) Å. The single crystals exhibited magnetic transitions from a ferrimagnetic phase with a spin-glass-like disorder to an antiferromagnetic phase at 107 K, and then to a paramagnetic phase at 270 K. From these magnetic transition temperatures, the composition of the Mn4-xGaxN single crystals was estimated to be Mn3.07Ga0.93N.

AB - Manganese gallium nitride (Mn4-xGaxN) single crystals as well as Mn-doped GaN single crystals were prepared by heating a Mn-Ga-Na melt at 750°C and 5 MPa of N2 pressure. The Mn 4-xGaxN crystals had the cubic anti-perovskite-type structure (space group: Pm3m) with a lattice parameter a = 3.8886(9) Å. The single crystals exhibited magnetic transitions from a ferrimagnetic phase with a spin-glass-like disorder to an antiferromagnetic phase at 107 K, and then to a paramagnetic phase at 270 K. From these magnetic transition temperatures, the composition of the Mn4-xGaxN single crystals was estimated to be Mn3.07Ga0.93N.

KW - Crystal growth

KW - Magnetic measurements

KW - Magnetically ordered materials

KW - X-ray diffraction

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UR - http://www.scopus.com/inward/citedby.url?scp=0346148200&partnerID=8YFLogxK

U2 - 10.1016/S0925-8388(03)00506-1

DO - 10.1016/S0925-8388(03)00506-1

M3 - Article

AN - SCOPUS:0346148200

SN - 0925-8388

VL - 364

SP - 280

EP - 282

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Single crystal growth of manganese gallium nitride using Mn-Ga-Na melt

Abstract

Keywords

ASJC Scopus subject areas

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