Single crystal growth of manganese gallium nitride using Mn-Ga-Na melt

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Takashi Kajiwara

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Manganese gallium nitride (Mn4-xGaxN) single crystals as well as Mn-doped GaN single crystals were prepared by heating a Mn-Ga-Na melt at 750°C and 5 MPa of N2 pressure. The Mn 4-xGaxN crystals had the cubic anti-perovskite-type structure (space group: Pm3m) with a lattice parameter a = 3.8886(9) Å. The single crystals exhibited magnetic transitions from a ferrimagnetic phase with a spin-glass-like disorder to an antiferromagnetic phase at 107 K, and then to a paramagnetic phase at 270 K. From these magnetic transition temperatures, the composition of the Mn4-xGaxN single crystals was estimated to be Mn3.07Ga0.93N.

Original languageEnglish
Pages (from-to)280-282
Number of pages3
JournalJournal of Alloys and Compounds
Issue number1-2
Publication statusPublished - 2004 Feb 11


  • Crystal growth
  • Magnetic measurements
  • Magnetically ordered materials
  • X-ray diffraction

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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