TY - JOUR
T1 - Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer
AU - Nakao, Wataru
AU - Fukuyama, Hiroyuki
N1 - Funding Information:
The present authors thank Prof. Y. Higo and Assoc. Prof. K. Takashima of Tokyo Institute of Technology for the provision and operating of FIB. Thanks are also offered to Prof. T. Sato, Mr. K. Hirose and Mr. F. Nakamura of Tokyo Institute of Technology for help with TEM operation. This work is financially supported by the Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (JSPS) and the research fund from the JSPS Research Fellowships for the Young Scientists (WN).
PY - 2003/12
Y1 - 2003/12
N2 - A noble method forming single crystalline AlN films has been developed as a new substrate for blue/UV light emitters. Sapphire substrates have been nitrided by appropriate CO-N2 gas mixtures saturated with graphite based on the chemical potential diagram of the Al-N-O-C system. The nitrided surface of sapphire consists of consecutive layers of AlN and γ-aluminum oxynitride (γ-ALON) with low-level dislocation density, where the γ-ALON layer spontaneously forms as an equilibrium phase and acts as a buffer. The lattice mismatch between sapphire substrate and AlN layer has been effectively reduced by using the γ-ALON buffer, which significantly attributes to the growth of single crystalline AlN.
AB - A noble method forming single crystalline AlN films has been developed as a new substrate for blue/UV light emitters. Sapphire substrates have been nitrided by appropriate CO-N2 gas mixtures saturated with graphite based on the chemical potential diagram of the Al-N-O-C system. The nitrided surface of sapphire consists of consecutive layers of AlN and γ-aluminum oxynitride (γ-ALON) with low-level dislocation density, where the γ-ALON layer spontaneously forms as an equilibrium phase and acts as a buffer. The lattice mismatch between sapphire substrate and AlN layer has been effectively reduced by using the γ-ALON buffer, which significantly attributes to the growth of single crystalline AlN.
KW - A1. Nitridation
KW - A2. Single crystal growth
KW - B1. γ-aluminum oxynitride
KW - B1. Sapphire
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U2 - 10.1016/j.jcrysgro.2003.07.026
DO - 10.1016/j.jcrysgro.2003.07.026
M3 - Article
AN - SCOPUS:0142095011
SN - 0022-0248
VL - 259
SP - 302
EP - 308
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3
ER -