Magnetization configuration and magnetization switching for monolayer bits with micron to submicron sizes were investigated. Magnetic force microscopy (MFM) images of bits demonstrated single domain structure for even a small aspect ratio of 1. Results showed the predominance of the synthetic antiferromagnetic pattern for ultrahigh bit density magnetic random access memory devices.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Jan 27|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)