Single domain observation for synthetic antiferromagnetically coupled bits with low aspect ratios

N. Tezuka; N. Koike; K. Inomata; S. Sugimoto

doi:10.1063/1.1539549

Single domain observation for synthetic antiferromagnetically coupled bits with low aspect ratios

N. Tezuka, N. Koike, K. Inomata, S. Sugimoto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Magnetization configuration and magnetization switching for monolayer bits with micron to submicron sizes were investigated. Magnetic force microscopy (MFM) images of bits demonstrated single domain structure for even a small aspect ratio of 1. Results showed the predominance of the synthetic antiferromagnetic pattern for ultrahigh bit density magnetic random access memory devices.

Original language	English
Pages (from-to)	604-606
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1539549
Publication status	Published - 2003 Jan 27

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1539549

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abstract = "Magnetization configuration and magnetization switching for monolayer bits with micron to submicron sizes were investigated. Magnetic force microscopy (MFM) images of bits demonstrated single domain structure for even a small aspect ratio of 1. Results showed the predominance of the synthetic antiferromagnetic pattern for ultrahigh bit density magnetic random access memory devices.",

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AB - Magnetization configuration and magnetization switching for monolayer bits with micron to submicron sizes were investigated. Magnetic force microscopy (MFM) images of bits demonstrated single domain structure for even a small aspect ratio of 1. Results showed the predominance of the synthetic antiferromagnetic pattern for ultrahigh bit density magnetic random access memory devices.

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Single domain observation for synthetic antiferromagnetically coupled bits with low aspect ratios

Abstract

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