TY - JOUR
T1 - Single electron random number generator
AU - Akima, Hisanao
AU - Sato, Shigeo
AU - Nakajima, Koji
PY - 2004/5
Y1 - 2004/5
N2 - A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.
AB - A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.
KW - Monte Carlo simulation
KW - Random number generator
KW - Single electron transistor
UR - http://www.scopus.com/inward/record.url?scp=2642519662&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2642519662&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2642519662
SN - 0916-8524
VL - E87-C
SP - 832
EP - 834
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
IS - 5
ER -