Single electron random number generator

Hisanao Akima, Shigeo Sato, Koji Nakajima

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.

Original languageEnglish
Pages (from-to)832-834
Number of pages3
JournalIEICE Transactions on Electronics
Issue number5
Publication statusPublished - 2004 May


  • Monte Carlo simulation
  • Random number generator
  • Single electron transistor


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