A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.
|Number of pages||3|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 2004 May|
- Monte Carlo simulation
- Random number generator
- Single electron transistor