Single ion implantation of Ge donor impurity in silicon transistors

E. Prati, Y. Chiba, M. Yano, K. Kumagai, M. Hori, G. Ferrari, T. Shinada, T. Tanii

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)


Ge impurities in silicon generate deep donor states in the silicon bandgap. We demonstrate the single ion implantation of Ge ions in the channel of silicon transistors and their electrical activation. Because of the deep donor ground state of Ge, we realize room temperature impurity bands. Our method enables us to create atomic scale conductive paths in silicon with no need of external gate voltages.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
Publication statusPublished - 2015 Sept 24
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: 2015 Jun 142015 Jun 15

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015


ConferenceSilicon Nanoelectronics Workshop, SNW 2015


  • Decision support systems
  • Electron devices
  • Meetings
  • Nanoelectronics
  • Nanoscale devices
  • Silicon


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