Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion

Gen Tamamushi; Takayuki Watanabe; Alexander A. Dubinov; Junki Mitsushio; Hiroyuki Wako; Akira Satou; Tetsuya Suemitsu; Hirokazu Fukidome; Maki Suemitsu; Maxim Ryzhii; Victor Ryzhii; Taiichi Otsuji

doi:10.1109/DRC.2016.7548491

Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Junki Mitsushio, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers [1,2]. In the graphene structures with p-i-n junctions, the injected electrons and holes have relatively low energies compared with those in optical pumping, so that the effect of carrier cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene THz lasers [3,4]. We implement a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) and experimentally observe a single mode emission at 5.2 THz at 100K. The device exhibits a nonlinear threshold-like behavior.

Original language	English
Title of host publication	74th Annual Device Research Conference, DRC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509028276
DOIs	https://doi.org/10.1109/DRC.2016.7548491
Publication status	Published - 2016 Aug 22
Event	74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: 2016 Jun 19 → 2016 Jun 22

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2016-August
ISSN (Print)	1548-3770

Conference

Conference	74th Annual Device Research Conference, DRC 2016
Country/Territory	United States
City	Newark
Period	16/6/19 → 16/6/22

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10.1109/DRC.2016.7548491

Cite this

Tamamushi, G., Watanabe, T., Dubinov, A. A., Mitsushio, J., Wako, H., Satou, A., Suemitsu, T., Fukidome, H., Suemitsu, M., Ryzhii, M., Ryzhii, V., & Otsuji, T. (2016). Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion. In 74th Annual Device Research Conference, DRC 2016 Article 7548491 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548491

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title = "Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion",

abstract = "Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers [1,2]. In the graphene structures with p-i-n junctions, the injected electrons and holes have relatively low energies compared with those in optical pumping, so that the effect of carrier cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene THz lasers [3,4]. We implement a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) and experimentally observe a single mode emission at 5.2 THz at 100K. The device exhibits a nonlinear threshold-like behavior.",

author = "Gen Tamamushi and Takayuki Watanabe and Dubinov, {Alexander A.} and Junki Mitsushio and Hiroyuki Wako and Akira Satou and Tetsuya Suemitsu and Hirokazu Fukidome and Maki Suemitsu and Maxim Ryzhii and Victor Ryzhii and Taiichi Otsuji",

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year = "2016",

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day = "22",

doi = "10.1109/DRC.2016.7548491",

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series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Tamamushi, G, Watanabe, T, Dubinov, AA, Mitsushio, J, Wako, H, Satou, A , Suemitsu, T , Fukidome, H, Suemitsu, M, Ryzhii, M, Ryzhii, V & Otsuji, T 2016, Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion. in 74th Annual Device Research Conference, DRC 2016., 7548491, Device Research Conference - Conference Digest, DRC, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 74th Annual Device Research Conference, DRC 2016, Newark, United States, 16/6/19. https://doi.org/10.1109/DRC.2016.7548491

Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion. / Tamamushi, Gen; Watanabe, Takayuki; Dubinov, Alexander A. et al.
74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7548491 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion

AU - Tamamushi, Gen

AU - Watanabe, Takayuki

AU - Dubinov, Alexander A.

AU - Mitsushio, Junki

AU - Wako, Hiroyuki

AU - Satou, Akira

AU - Suemitsu, Tetsuya

AU - Fukidome, Hirokazu

AU - Suemitsu, Maki

AU - Ryzhii, Maxim

AU - Ryzhii, Victor

AU - Otsuji, Taiichi

PY - 2016/8/22

Y1 - 2016/8/22

N2 - Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers [1,2]. In the graphene structures with p-i-n junctions, the injected electrons and holes have relatively low energies compared with those in optical pumping, so that the effect of carrier cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene THz lasers [3,4]. We implement a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) and experimentally observe a single mode emission at 5.2 THz at 100K. The device exhibits a nonlinear threshold-like behavior.

AB - Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers [1,2]. In the graphene structures with p-i-n junctions, the injected electrons and holes have relatively low energies compared with those in optical pumping, so that the effect of carrier cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene THz lasers [3,4]. We implement a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) and experimentally observe a single mode emission at 5.2 THz at 100K. The device exhibits a nonlinear threshold-like behavior.

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ER -

Tamamushi G, Watanabe T, Dubinov AA, Mitsushio J, Wako H, Satou A et al. Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion. In 74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7548491. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2016.7548491

Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion

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