SiO emission and incorporation in silicon oxidation process using molecular dynamics method

Norihiko Takahashi; Takahiro Yamasaki; Chioko Kaneta

doi:10.1149/1.3375622

SiO emission and incorporation in silicon oxidation process using molecular dynamics method

Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated the dynamics of oxidation processes with stress relaxation in the Si/SiO₂ interface by using variable charge molecular dynamics methods. An SiO molecule is emitted from the Si/SiO₂ interface into the SiO₂ region in order to release the accumulated stress in the interface. The emitted SiO molecule having Si dangling bonds moves into the SiO₂ network. The SiO molecule is completely incorporated into the SiO₂ network after an oxygen atom (oxygen vacancy) diffuses to be bonded with these Si dangling bonds.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	361-368
Number of pages	8
Edition	1
ISBN (Electronic)	9781607681410
ISBN (Print)	9781566777919
DOIs	https://doi.org/10.1149/1.3375622
Publication status	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3375622

Cite this

Takahashi, N., Yamasaki, T., & Kaneta, C. (2010). SiO emission and incorporation in silicon oxidation process using molecular dynamics method. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 361-368). (ECS Transactions; Vol. 28, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3375622

SiO emission and incorporation in silicon oxidation process using molecular dynamics method. / Takahashi, Norihiko; Yamasaki, Takahiro; Kaneta, Chioko.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2010. p. 361-368 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takahashi, N, Yamasaki, T & Kaneta, C 2010, SiO emission and incorporation in silicon oxidation process using molecular dynamics method. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, Electrochemical Society Inc., pp. 361-368. https://doi.org/10.1149/1.3375622

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abstract = "We investigated the dynamics of oxidation processes with stress relaxation in the Si/SiO2 interface by using variable charge molecular dynamics methods. An SiO molecule is emitted from the Si/SiO2 interface into the SiO2 region in order to release the accumulated stress in the interface. The emitted SiO molecule having Si dangling bonds moves into the SiO2 network. The SiO molecule is completely incorporated into the SiO2 network after an oxygen atom (oxygen vacancy) diffuses to be bonded with these Si dangling bonds.",

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AB - We investigated the dynamics of oxidation processes with stress relaxation in the Si/SiO2 interface by using variable charge molecular dynamics methods. An SiO molecule is emitted from the Si/SiO2 interface into the SiO2 region in order to release the accumulated stress in the interface. The emitted SiO molecule having Si dangling bonds moves into the SiO2 network. The SiO molecule is completely incorporated into the SiO2 network after an oxygen atom (oxygen vacancy) diffuses to be bonded with these Si dangling bonds.

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SiO emission and incorporation in silicon oxidation process using molecular dynamics method

Abstract

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