Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.
|Number of pages||5|
|Journal||Physics Letters, Section A: General, Atomic and Solid State Physics|
|Publication status||Published - 1999 Oct 4|
- Negative-differential resistance
- Quasibound states
- Resonant tunneling