Size effect on quasibound states and negative differential resistances in step-barrier structures

Yong Guo; Bing Lin Gu; Zhong Zeng; Yoshiyuki Kawazoe

doi:10.1016/S0375-9601(99)00568-X

Size effect on quasibound states and negative differential resistances in step-barrier structures

Yong Guo, Bing Lin Gu, Zhong Zeng, Yoshiyuki Kawazoe

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.

Original language	English
Pages (from-to)	114-118
Number of pages	5
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	261
Issue number	1-2
DOIs	https://doi.org/10.1016/S0375-9601(99)00568-X
Publication status	Published - 1999 Oct 4

Keywords

Heterojunctions
Negative-differential resistance
Quasibound states
Resonant tunneling

Access to Document

10.1016/S0375-9601(99)00568-X

Cite this

@article{dac831fc8cff4033b21386ba3c3590c0,

title = "Size effect on quasibound states and negative differential resistances in step-barrier structures",

abstract = "Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.",

keywords = "Heterojunctions, Negative-differential resistance, Quasibound states, Resonant tunneling",

author = "Yong Guo and Gu, {Bing Lin} and Zhong Zeng and Yoshiyuki Kawazoe",

note = "Funding Information: Two of us (B.-L.G. and Y.G.) would like to acknowledge partial support by the National High Technology Development Program of P.R. China (Grant No. 715-010-0011) and by the Research Foundation of Tsinghua University (Grant. No. 98jc082).",

year = "1999",

month = oct,

day = "4",

doi = "10.1016/S0375-9601(99)00568-X",

language = "English",

volume = "261",

pages = "114--118",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Size effect on quasibound states and negative differential resistances in step-barrier structures

AU - Guo, Yong

AU - Gu, Bing Lin

AU - Zeng, Zhong

AU - Kawazoe, Yoshiyuki

N1 - Funding Information: Two of us (B.-L.G. and Y.G.) would like to acknowledge partial support by the National High Technology Development Program of P.R. China (Grant No. 715-010-0011) and by the Research Foundation of Tsinghua University (Grant. No. 98jc082).

PY - 1999/10/4

Y1 - 1999/10/4

N2 - Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.

AB - Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.

KW - Heterojunctions

KW - Negative-differential resistance

KW - Quasibound states

KW - Resonant tunneling

UR - http://www.scopus.com/inward/record.url?scp=0346615707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346615707&partnerID=8YFLogxK

U2 - 10.1016/S0375-9601(99)00568-X

DO - 10.1016/S0375-9601(99)00568-X

M3 - Article

AN - SCOPUS:0346615707

SN - 0375-9601

VL - 261

SP - 114

EP - 118

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 1-2

ER -

Size effect on quasibound states and negative differential resistances in step-barrier structures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this