TY - GEN
T1 - Sm-doped Pb(Mg, Nb)O-PbTiO Sputter-Epitaxy on Si towards Giant-Piezoelectric Thin Film for Mems
AU - Qi, Xuanmeng
AU - Yoshida, Shinya
AU - Tanaka, Shuji
N1 - Funding Information:
This work was supported in part by JSPS KAKENHI Grant Numbers 19K05231 and 18H01390. This work was also supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT).
Publisher Copyright:
© 2021 IEEE.
PY - 2021/1/25
Y1 - 2021/1/25
N2 - Pb(Zr, Ti)O (PZT) has been the most widely utilized in piezoelectric Micro Electro Mechanical Systems (MEMS) actuator. However, the improvement of its piezoelectricity has been saturated recently. Thus, we have developed Sm-doped Pb(Mg, Nb)O3-PbTiO (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film beyond PZT. In this study, a (001)/(100)-oriented Sm-PMN-PT with the pure perovskite phase was successfully sputter-deposited on a Si substrate using an epitaxial PZT buffer layer. The transverse piezoelectric coefficient, |e|, of a 1.5-gm-thick Sm-PMN-PT/PZT stack film measured over 20 C/m, which is equivalent to or better than those of the best class PZT thin films. From this result, the influence of the PZT buffer layer was deembedded, and |e| of the sole Sm-PMN-PT thin film was estimated at higher than 26 C/m. This result suggests a potential of epitaxial Sm-PMN-PT for high-performance piezo-MEMS.
AB - Pb(Zr, Ti)O (PZT) has been the most widely utilized in piezoelectric Micro Electro Mechanical Systems (MEMS) actuator. However, the improvement of its piezoelectricity has been saturated recently. Thus, we have developed Sm-doped Pb(Mg, Nb)O3-PbTiO (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film beyond PZT. In this study, a (001)/(100)-oriented Sm-PMN-PT with the pure perovskite phase was successfully sputter-deposited on a Si substrate using an epitaxial PZT buffer layer. The transverse piezoelectric coefficient, |e|, of a 1.5-gm-thick Sm-PMN-PT/PZT stack film measured over 20 C/m, which is equivalent to or better than those of the best class PZT thin films. From this result, the influence of the PZT buffer layer was deembedded, and |e| of the sole Sm-PMN-PT thin film was estimated at higher than 26 C/m. This result suggests a potential of epitaxial Sm-PMN-PT for high-performance piezo-MEMS.
KW - Microelectro-mechanical systems (MEMSs)
KW - Nb)-PbTiO film
KW - Sm-Pb(Mg
KW - sputter deposition
KW - transverse piezoelectric coefficient
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U2 - 10.1109/MEMS51782.2021.9375393
DO - 10.1109/MEMS51782.2021.9375393
M3 - Conference contribution
AN - SCOPUS:85103452800
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 654
EP - 657
BT - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Y2 - 25 January 2021 through 29 January 2021
ER -