TY - GEN
T1 - Sn nanothreads in GaAs
T2 - International Conference on Micro- and Nanoelectronics - 2016, ICMNE 2016
AU - Semenikhin, I.
AU - Vyurkov, V.
AU - Bugaev, A.
AU - Khabibullin, R.
AU - Ponomarev, D.
AU - Yachmenev, A.
AU - Maltsev, P.
AU - Ryzhii, M.
AU - Otsuji, T.
AU - Ryzhii, V.
N1 - Funding Information:
The research was supported by the grants of Russian Academy of Sciences and the Russian Foundation for Basic Research (RFBR) (# 14-07-00937, 16-29-09510, 16-29-03033, 16-07-00187), the theoretical part of this work (I. Semenikhin, V. Vyurkov, V. Ryzhii) and the experimental part (A. Bugaev, R. Khabibullin, D. Ponomarev, A. Yachmenev) were supported by the grant of the Russian Scientific Foundation (RSF) (#14-29-00277). The authors are also grateful to the Joint Supercomputer Center of the Russian Academy of Sciences http://www.jscc.ru/eng/index.shtml)
Publisher Copyright:
© 2016 SPIE..
PY - 2016
Y1 - 2016
N2 - The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.
AB - The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.
KW - Conduction anisotropy
KW - Hot-electron bolometer
KW - Nanothreads
KW - Vicinal surface
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U2 - 10.1117/12.2267241
DO - 10.1117/12.2267241
M3 - Conference contribution
AN - SCOPUS:85011568068
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - International Conference on Micro- and Nano-Electronics 2016
A2 - Lukichev, Vladimir F.
A2 - Rudenko, Konstantin V.
PB - SPIE
Y2 - 3 October 2016 through 7 October 2016
ER -