Soft magnetic properties of FeMO (MHf, Zr, Y, Ce) films with high electrical resistivity

Structure, magnetic properties and electrical resistivity (g9) of FeM O (M = Hf, Zr, Y, Ce) prepared by r.f. reactive sputtering technique in an Ar + O₂ atmosphere were investigated. In an as-deposited state, the structure of the FeMO films in the compositional range of 8 < 0 < 35 at.% and 5-7 < NI < 25 at.% is found to be composed of nanoscale grains and amorphous phase containing large amounts of M and O. In the course of the annealing, which temperature is below the crystalization temperature, the bcc grains slightly grow and the T_c of the amorphous phase rises with increasing O content in the amorphous phase mainly due to discharge of 0 from the bcc to the amorphous phase. μ′_100MHz of 1000, H_c of 41A/m, ρ{variant} of 6.4 μ Ω m and μ′_100MHz of 700, H_c of 290A/m, ρ{variant} of 6.3μ Ωm were obtained for Fe₆₈Y₂₂,O₁₀ and Fe₆₁Hf₁₃O₂₅ films annealed at 773K and 673K for 10.8ks under uniaxial field, respectively.