The atom-specific electronic structure at the oxynitride/Si interface was investigated by soft X-ray absorption and emission spectroscopy in order to elucidate the relationship of the incorporation effect of nitrogen atoms at the interface with the performance of metal-oxide-silicon devices. At the interface, the conduction band minimum (CBM) decreases when the concentration of N atoms at the interface increases. For valence states, the width of the nonbonding states of N atoms increases when the concentration of N atoms is high, indicating that an inhomogeneous interface is formed. Thus, the excessive incorporation of nitrogen atoms at the SiO2/Si(100) interface decreases CBM and induces the formation of a more inhomogeneous interface, which decreases carrier mobility in the channel region.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2007 Jan 12|
- X-ray absorption
- X-ray emission
ASJC Scopus subject areas
- Physics and Astronomy(all)