SOI platform and III-V integrated active photonic device by direct bonding for data communication

Linghan Li; Akio Higo; Eiji Higurashi; Masakazu Sugiyama; Yoshiaki Nakano

doi:10.1109/LTB-3D.2012.6238055

SOI platform and III-V integrated active photonic device by direct bonding for data communication

Linghan Li, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

ENG - Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

The recent research progress of Si/III-V hetero-integration by Ar/O ₂ plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current- pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5 ⁰C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.

Original language	English
Title of host publication	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Pages	87
Number of pages	1
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238055
Publication status	Published - 2012
Event	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 2012 May 22 → 2012 May 23

Publication series

Name	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Conference

Conference	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Country/Territory	Japan
City	Tokyo
Period	12/5/22 → 12/5/23

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10.1109/LTB-3D.2012.6238055

Cite this

Li, L., Higo, A., Higurashi, E., Sugiyama, M., & Nakano, Y. (2012). SOI platform and III-V integrated active photonic device by direct bonding for data communication. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 (pp. 87). Article 6238055 (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238055

Li, Linghan ; Higo, Akio ; Higurashi, Eiji et al. / SOI platform and III-V integrated active photonic device by direct bonding for data communication. Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. pp. 87 (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012).

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title = "SOI platform and III-V integrated active photonic device by direct bonding for data communication",

abstract = "The recent research progress of Si/III-V hetero-integration by Ar/O 2 plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current- pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5 0C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.",

author = "Linghan Li and Akio Higo and Eiji Higurashi and Masakazu Sugiyama and Yoshiaki Nakano",

year = "2012",

doi = "10.1109/LTB-3D.2012.6238055",

language = "English",

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series = "Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012",

pages = "87",

booktitle = "Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012",

note = "2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 ; Conference date: 22-05-2012 Through 23-05-2012",

}

Li, L, Higo, A, Higurashi, E, Sugiyama, M & Nakano, Y 2012, SOI platform and III-V integrated active photonic device by direct bonding for data communication. in Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238055, Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, pp. 87, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 12/5/22. https://doi.org/10.1109/LTB-3D.2012.6238055

SOI platform and III-V integrated active photonic device by direct bonding for data communication. / Li, Linghan; Higo, Akio; Higurashi, Eiji et al.
Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. p. 87 6238055 (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The recent research progress of Si/III-V hetero-integration by Ar/O 2 plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current- pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5 0C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.

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Li L, Higo A, Higurashi E, Sugiyama M, Nakano Y. SOI platform and III-V integrated active photonic device by direct bonding for data communication. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. p. 87. 6238055. (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). doi: 10.1109/LTB-3D.2012.6238055

SOI platform and III-V integrated active photonic device by direct bonding for data communication

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